SI9434DY |
RFQ for SI9434DY |
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| Product | Manufacturers | Pack | D/C |
| SI9434DY | - | 2006 | 50000 |
| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | ±8 | ||
| Continuous Drain Current (TJ = 175°C)a | TA = 25°C | ID | ±6.4 | A |
| TA = 70°C | ±5.1 | |||
| Pulsed Drain Current(10 s Pulse Width) | IDM | ±10 | ||
| Continuous Source Current (Diode Conduction)a | IS | -2.5 | ||
| Maximum Power DissipationaMOSFET)a, b | TA = 25°C | PD | 2.5 | W |
| TA = 70°C | 1.6 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | |